Specification:

Operation Frequency: L wave band

Operation Bandwidth: Transmit≥140MHz

Receive≥1650MHz

Operation Mode: pulse mode

Transmitting power: ≥100W (Linearity)

≥200W (P-1, Upgraded version)

Noise: ≤ 2.2dB

Amplitude consistency: ≤±0.4dB

Phase consistency: ≤4° (RMS)

Amplitude and phase function: 6 bit phase shift, 6 bit attenuation

Size: 190mm×80mm×20mm (Four channel)

Technical Characteristics:

Use the negative pressure debugging technology to achieve the high power and high efficiency of the GaN power amplifier and the miniaturization of the module is realized by using the thin film micro assembly technology.